Method of manufacturing photoluminescing porous silicon using sp

Details Method of manufacturing photoluminescing porous silicon using sp Method of manufacturing photoluminescing porous silicon using sp

1993-09-14

1995-03-14

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 334, B44C 122

Patent

active

053974298

ABSTRACT:
A high frequency, high voltage spark generator is used to create a large number of sparks to erode the surface of a silicon wafer to a depth of up to 100 microns. After a sufficient amount of erosion has occurred, but prior to any macro-scale removal of material, the surface layer of the silicon wafer becomes porous and photoluminescing. The method can be performed in ambient atmosphere and temperature, or in specific gas atmospheres and at different temperatures. The method produces photoluminescing porous silicon layers on p-type, n-type, low-doped, high-doped or undoped silicon wafers.

REFERENCES:
patent: 5256339 (1993-10-01), Thornton
patent: 5272355 (1993-12-01), Namavar
patent: 5279737 (1994-01-01), Sekhar
patent: 5301204 (1994-04-01), Cho
patent: 5318676 (1994-06-01), Sailor

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