Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-06-16
1999-08-17
Meeks, Timothy
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419222, 20419223, 20419226, 430 5, C23C 1414, C23C 1434
Patent
active
059388978
ABSTRACT:
A phase-shifting photomask blank is made by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.
REFERENCES:
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patent: 5635315 (1997-06-01), Mitsui
patent: 5804337 (1998-09-01), Mitsui
Proceedings Reprint, SPIE vol. 2322 Photomask Technology and Management (1994), pp. 387-391. (no month).
Digest of Papers, Photomask Japan '95 and Symposium on Photomask and X-ray Mask Technology, Apr. 1995, pp. 94-95.
Photomask and X-Ray Mask Technology II, SPIE, vol. 2512 (1995), pp. 319-332. (no month).
Chiba Akira
Hayashi Atsushi
Isao Akihiko
Kawada Susumu
Miyazaki Junji
Meeks Timothy
Mitsubishi Electric Corporation
Ulcoat (Ulvac Coating Corporation)
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