Method of manufacturing non-single crystal film and non-single c

Details Method of manufacturing non-single crystal film and non-single c Method of manufacturing non-single crystal film and non-single c

1993-03-24

1996-12-10

Breneman, R. Bruce

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 437100, H05H 124

Patent

active

055828809

ABSTRACT:
A method of manufacturing an amorphous silicon thin film exhibiting excellent quality for use in a TFT, a photosensor or a solar cell at a low cost by a plasma CVD method utilizing high frequency discharge, the method being consisting of steps of using a silicon compound such as SiH.sub.4 as raw material gas, making the frequency f (MHz) of a high frequency power source to be 30 MHz or higher, and applying negative voltage to an electrode of a substrate if necessary. Furthermore, it is preferably that the relationship between the distance d (cm) between electrodes and the frequency f (MHz) of the high frequency power source satisfies f(HMz)/d (cm)<30 HMz/cm.

REFERENCES:
patent: 4933203 (1990-06-01), Curtins
patent: 5055421 (1991-10-01), Birkle et al.
Sze, VLSI Technology, 1988, McGraw-Hill, p. 218-219.

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