Method of manufacturing nitride semiconductor substrate

Details Method of manufacturing nitride semiconductor substrate Method of manufacturing nitride semiconductor substrate

2005-03-08

2005-03-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S493000, C438S489000, C438S509000, C117S003000

Reexamination Certificate

active

06864158

ABSTRACT:
A main surface of a base substrate of sapphire is selectively formed an irregular region on the main surface. Then, a semiconductor layer of gallium nitride is grown to fill recessed portions in the irregular region of the base substrate and make the upper surface even. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the irregular region of the base substrate to separate the semiconductor layer from the base substrate. As a result, a nitride semiconductor substrate is produced from the semiconductor layer.

REFERENCES:
patent: 4308078 (1981-12-01), Cook
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6113685 (2000-09-01), Wang et al.
patent: 6348096 (2002-02-01), Sunakawa et al.
patent: 6426519 (2002-07-01), Asai et al.
patent: 3091593 (1994-08-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing nitride semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing nitride semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing nitride semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3443741