Method of manufacturing nitride semiconductor substrate

Details Method of manufacturing nitride semiconductor substrate Method of manufacturing nitride semiconductor substrate

2011-01-11

2011-01-11

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257SE21121

Reexamination Certificate

active

07867881

ABSTRACT:
A method for manufacturing a nitride semiconductor substrate including the steps of: forming a nitride semiconductor layer on a sapphire substrate, and manufacturing a freestanding nitride semiconductor substrate by using the nitride semiconductor layer separated from the sapphire substrate, wherein variability of inclinations of the C-axes, being a difference between a maximum value and a minimum value of inclination of the C-axes in a radially-outward direction at each point on a front surface of the sapphire substrate is 0.3° or more and 1° or less.

REFERENCES:
patent: 6652648 (2003-11-01), Park
patent: 2005/0093003 (2005-05-01), Shibata
patent: 2007/0040219 (2007-02-01), Shibata
patent: 2002-57119 (2002-02-01), None
Oshima, Yuichi et al.: Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation; Jpn. J. Appl. Phys., vol. 42 (2003), pp. L1-L3; Part 2, No. 1A/B, Jan. 15, 2003.

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