Method of manufacturing nanowires and electronic device

Details Method of manufacturing nanowires and electronic device Method of manufacturing nanowires and electronic device

2007-03-20

2007-03-20

Norton, Nadine (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

C216S002000, C257S001000, C257S009000, C438S022000, C385S016000, C385S012000

Reexamination Certificate

active

10509564

ABSTRACT:
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising a first layer of a first material and a second layer of a second material with a mutual interface, which first and second materials are different. They may be different in the doping type. Alternatively, the main constituent of the material may be different, for example SiGe or SiC versus Si, or InP versus InAs. In the resulting nanowires, the interface is atomically sharp. The electronic devices having nanowires between a first and second electrode accordingly have very good electroluminescent and optoelectronic properties.

REFERENCES:
patent: 0544408 (1993-06-01), None
patent: 0 544 408 (1993-06-01), None
E. Giovine, Nanotechnology, vol. 12, pp. 132-135 (2001).
Nassiopoulos, A G et al: “Electroluminescent Solid State Devices Based on Silicon Nanowires, Fabricated by Using Lithography and Etching Techniques” Thin Solid Fils, Elsevier-Sequois S.A. Lausanne, CH., vol. 297, No. 1-2, Apr. 1, 1997.
He et al: “Dispersion, Refinement, and Manupulation of Single Silicon Nanowires” Applied Physics Letters, vol. 80, No. 10, Mar. 11, 2002.

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