Method of manufacturing multilevel interconnect structure...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21575, C257SE23141

Reexamination Certificate

active

07615481

ABSTRACT:
A method of manufacturing a multilevel interconnect structure using a screen printing method is disclosed. In the multilevel interconnect structure, an interlayer insulating film having a through hole with a conductive bump therein, and a second interconnect line are stacked on a substrate with a first interconnect line formed thereon. The first interconnect line is electrically connected to the second interconnect line via the conductive bump. The method includes a step of forming a first region of the interlayer insulating film on the substrate with the first interconnect line formed thereon, the first region including a part of a peripheral wall of the through hole; a step of forming a second region of the interlayer insulating film on the substrate with the first region formed thereon, the second region including a remaining part of the peripheral wall of the through hole; and a step of forming the conductive bump.

REFERENCES:
patent: 3622384 (1971-11-01), Davey et al.
patent: 4529835 (1985-07-01), Mizuno
patent: 2007/0054212 (2007-03-01), Akiyama et al.
patent: 2006-120873 (2006-05-01), None
patent: 2007-95783 (2007-04-01), None

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