Method of manufacturing mirror-polished silicon wafers, and appa

Details Method of manufacturing mirror-polished silicon wafers, and appa Method of manufacturing mirror-polished silicon wafers, and appa

1997-08-13

1999-11-30

Monin, Jr., Donald L.

Metal working

Barrier layer or semiconductor device making

438471, 438908, 257913, H01L 2120

Patent

active

059934930

ABSTRACT:
Two or more processes selected from heat treatment for anihilation of oxygen donors, formation of a gettering region, and formation of a dopant-volatilization-prevention film are simultaneously performed in a common apparatus in accordance with the specifications of silicon wafers to be manufactured. Therefore, productivity can be improved.

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patent: 5516706 (1996-05-01), Kusakabe
patent: 5562800 (1996-10-01), Kawamura et al.
patent: 5834363 (1998-11-01), Masanori

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