Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with preceding diverse...
Reexamination Certificate
2009-05-26
2011-10-04
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with preceding diverse...
C438S020000, C438S503000, C977S842000, C977S876000, C977S893000, C445S050000
Reexamination Certificate
active
08030191
ABSTRACT:
Disclosed herein are a method of producing microstructure and a method of producing mold, the methods permitting production of much smaller pores than before in an atmosphere where impurities are negligible and also permitting production of microstructures having a smaller size and a higher crystallinity than before with the help of the pores. The method of producing microstructure comprises a step of making pores (4) in a substrate (1) to become a mold (5) by irradiation with a focused energy beam (3) and a step of growing a microstructure (8) in the thus made pores (4). The method of producing a mold includes a step of making pores (4) by irradiating a substrate (1) to become a mold (5) with a focused energy beam (3).
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Office Action issued Jul. 28, 2006 in JP 2002-372277.
Kadono Koji
Murakami Yosuke
Sony Corporation
Wilczewski Mary
Wolf Greenfield & Sacks P.C.
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