Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-07-05
2011-07-05
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S048000, C438S052000, C310S329000, C073S488000, C073S514010, C257SE21022, C257SE21573, C257SE23193
Reexamination Certificate
active
07972886
ABSTRACT:
Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.
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Counterpart Japanese Office Action.
English translation of Figs. 5, 7-9, 10, and 11(a) of JP A 2006-023606.
English translation of Paragraph 0026 of JP A 2005-165067.
English translation of Paragraph 0058 of JP A 2007-069341.
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Fujimori Tsukasa
Goto Yasushi
Hanaoka Yuko
Jeong Heewon
Hitachi , Ltd.
Jones Eric W
Le Thao X
Miles & Stockbridge P.C.
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