Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-05-17
2005-05-17
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S481000, C438S482000
Reexamination Certificate
active
06893909
ABSTRACT:
A method of manufacturing a MOS transistor is provided. A gate insulation layer and a conductive layer are sequentially formed over a substrate. A pre-amorphization implantation is carried out to amorphize the conductive layer. The conductive layer and the gate insulation layer are patterned to form a gate structure. A first spacer is formed on the sidewall of the gate structure. A second pre-amorphization implantation is carried out to amorphize a portion of the substrate. A doped source/drain extension region is formed in the substrate on each side of the first spacer. A second spacer is formed on the sidewall of the first spacer and then a doped source/drain region is formed in the substrate on each side of the second spacer. A solid phase epitaxial process is carried out to convert the doped source/drain extension region and the doped source/drain region into a source/drain terminal. In the pre-amorphization implantations, dopants having an ionic radius greater than the germanium ion are used.
REFERENCES:
patent: 6806149 (2004-10-01), Bu et al.
patent: 20030162336 (2003-08-01), Wei et al.
patent: 20040121565 (2004-06-01), Wieczorek et al.
Chen Yu-Kun
Lee Chun-Yi
Wang Yu-Ren
Yang Neng-Hui
J.C. Patents
Le Thao P.
United Microelectronics Corp.
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