Method of manufacturing metal insulating layer in...

Details Method of manufacturing metal insulating layer in... Method of manufacturing metal insulating layer in...

2006-12-27

2009-12-29

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S625000, C438S637000, C438S672000

Reexamination Certificate

active

07638422

ABSTRACT:
A method of forming a metal insulating layer of a semiconductor device relieves stress due to differential thermal expansion between insulating sub-layers by rounding off sharp edges formed between the sub-layers. A first metal insulating sub-layer is formed over a metal interconnection layer pattern. The first metal insulating sub-layer has sharp profiles due to a step height difference in the metal interconnection layer pattern. The first metal insulating sub-layer is wet etched to round off the sharp profiles. A second metal insulating sub-layer is formed over the first metal insulating sub-layer.

REFERENCES:
patent: 5162261 (1992-11-01), Fuller et al.
patent: 5494854 (1996-02-01), Jain
patent: 6211040 (2001-04-01), Liu et al.
patent: 2003/0008492 (2003-01-01), Jung et al.
patent: 2006/0022343 (2006-02-01), Lin et al.

Affiliated with

Also associated with

Rating

Method of manufacturing metal insulating layer in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing metal insulating layer in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing metal insulating layer in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4079368