Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-05-26
2000-04-04
Krynski, William
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C23C 1400
Patent
active
060456655
ABSTRACT:
A technique to prevent peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and the members inside the apparatus and to suppress particle production without contamination of the inside of the apparatus. A member for a thin-film formation apparatus having inner walls and a method for manufacturing the member is provided. A plurality of unevenness is provided on at least a portion of the surface of the member and the inner walls on which unnecessary thin films are deposited. The surfaces are subjected to masking, and then, etching processing to form the plurality of unevenness. After the etching processing the masking is removed.
REFERENCES:
patent: 5891353 (1999-04-01), Masumura et al.
English Abstract of the Japanese publication No. 08-176816.
English Abstract of the Japanese publication No. 61-056277.
English Abstract of the Japanese publication No. 63-162861.
English Abstract of the Japanese publication No. 02-285067.
English Abstract of the Japanese publication No. 03-138354.
English Abstract of the Japanese publication No. 01-316456.
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English Abstract of the Japanese publication No. 62-142758.
Database WPIL on Questel, week 9244, London: Derwent Publications Ltd., AN 92-360194; & JP 04-259937 A (Victor Co. of Japan), abstract.
Fukushima Atsushi
Ohhashi Tateo
Takahashi Hideyuki
Japan Energy Corporation
Krynski William
Xu Hong J.
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