Method of manufacturing mask for electron beam lithography...

Details Method of manufacturing mask for electron beam lithography... Method of manufacturing mask for electron beam lithography...

2006-04-18

2006-04-18

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S296000, C430S313000, C430S314000, C430S316000, C430S942000

Reexamination Certificate

active

07029801

ABSTRACT:
This invention provides a method of manufacturing mask for electron beam lithography and a mask blank for electron beam lithography, which could prevent damage upon a front side of an SOI (Silicon On Insulator) layer and also provide desirable etching of a silicon base layer of an SOI substrate is used.A mask blank for electron beam lithography is manufactured as an intermediary product by etching a silicon base layer and a BOX layer subsequent to forming a protective layer on a front side of an SOI (Silicon On Insulator) layer simultaneously with forming a hard mask on a back side of the SOI layer. Then, an etching process is performed upon the SOI layer to thereby complete a manufacture process of a mask for electron beam lithography having an aperture for transmitting an electron beam therethrough.

REFERENCES:
patent: 4068018 (1978-01-01), Hashimoto et al.
patent: 5908719 (1999-06-01), Guckel et al.
patent: 6428937 (2002-08-01), Katakura
patent: 05-216216 (1993-08-01), None
patent: 10-340852 (1998-12-01), None
patent: 2001-077013 (2001-03-01), None
Japanese Patent Office Action, dated Dec. 7, 2004.

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