Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-03-01
2011-03-01
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C365S158000, C257SE29042, C438S263000, C438S264000
Reexamination Certificate
active
07897412
ABSTRACT:
In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
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Kim Tae-Wan
Lee Jung-Hyun
Park Sang-Jin
Park Wan-jun
Song I-Hun
Chi Suberr
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Vu David
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