Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-04-11
2006-04-11
Everhart, C. (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S790000, C438S763000
Reexamination Certificate
active
07026257
ABSTRACT:
A method is used for forming a low relative permittivity dielectric film by a vacuum ultraviolet CVD. The film is a silicon organic film (e.g., SiOCH, SiC, SiCH, and SiOF films) that has a controlled relative permittivity and is formed at temperatures below 350° C. The method can control the content of carbon in the film to achieve a desired relative permittivity. A desired relative permittivity can be achieved by: {circle around (1)} controlling the type and flow rate of added gas (O2, N2O) that contains oxygen atoms; {circle around (2)} controlling the flow rate of TEOS; {circle around (3)} controlling the intensity of light emitted from the excimer lamp; {circle around (4)} elevating the temperatures of the synthetic quartz window and the gas flowing in the vacuum chamber, and controlling the distance between the synthetic quartz window and the wafer; and {circle around (5)} controlling the temperature of the wafer.
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Ichiki Yutaka
Miyano Jun-ichi
Motokawa Yousuke
Motoyama Yoshikazu
Toshikawa Kiyohiko
Everhart C.
Oki Electric Industry Co. Ltd.
Sartori Michael A.
Schneller Marina V.
Venable LLP
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