Method of manufacturing light emitting device

Details Method of manufacturing light emitting device Method of manufacturing light emitting device

2011-08-23

2011-08-23

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C257SE25032

Reexamination Certificate

active

08003419

ABSTRACT:
Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

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