Method of manufacturing iron garnet layers

Details Method of manufacturing iron garnet layers Method of manufacturing iron garnet layers

1991-08-29

1992-06-16

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, C23C 1434

Patent

active

051222507

ABSTRACT:
A method of manufacturing ion garnet layers having refractive indices n adjusted in a defined manner and lattice constants a.sub.o adjusted in a defined manner, in which the layers are deposited on a substrate by means of rf cathode sputtering using a target comprising substantially a garnet phase besides residual phases of substantially the same sputtering rates in a noble gas plasma of an ion energy of the ions bombarding the growing layer of smaller than 10.sup.2 eV and at a pressure in the range from 0.1 to 2.0 Pa, the noble gas being doped with up to 5% by volume of at least one reactive gas.

REFERENCES:
patent: 3607698 (1971-09-01), Kay
patent: 3949387 (1976-04-01), Chaudhari et al.
patent: 4444635 (1984-04-01), Kobayashi et al.
patent: 4778580 (1988-10-01), Doormann et al.
patent: 4849080 (1989-07-01), Doormann et al.
J. Schneider et al., "O.sub.2 Contaminated . . . Films", J. Appl. Phys. 49(3), 3/1978, pp. 1747-1749.

Affiliated with

Also associated with

Rating

Method of manufacturing iron garnet layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing iron garnet layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing iron garnet layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1751777