Method of manufacturing integrated circuit semiconductor device

Details Method of manufacturing integrated circuit semiconductor device Method of manufacturing integrated circuit semiconductor device

1987-04-09

1989-02-21

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 30, 437229, G03C 500

Patent

active

048064572

ABSTRACT:
A method of manufacturing integrated circuit semiconductor device in which a check pattern of resist film is formed for monitoring a state of an element-forming resist pattern having a narrow interval of 1.0 .mu.m or less is disclosed. The check pattern is designed such that a plurality of resist stripes are arranged with intervals therebetween. Each of the intervals is of 1.0 .mu.m or less and the width of the resist stripe is three times or more the interval.

REFERENCES:
patent: 3998639 (1976-12-01), Feldman et al.
patent: 4200396 (1980-04-01), Kleinknecht et al.
patent: 4330213 (1982-05-01), Kleinknecht et al.
patent: 4408884 (1983-10-01), Kleinknecht et al.

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