Method of manufacturing integrated circuit

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S669000, C438S942000, C438S945000, C438S948000, C438S950000

Reexamination Certificate

active

06958292

ABSTRACT:
In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1is used which is provided partially with light shielding patterns3aformed of a resist film, in addition to light shielding patterns formed of a metal.

REFERENCES:
patent: 4684971 (1987-08-01), Payne
patent: 5376483 (1994-12-01), Rolfson
patent: 5378585 (1995-01-01), Watanabe
patent: 5389474 (1995-02-01), Iguchi et al.
patent: 5418092 (1995-05-01), Okamoto
patent: 5538816 (1996-07-01), Hashimoto et al.
patent: 5556724 (1996-09-01), Tarumoto et al.
patent: 5738959 (1998-04-01), Miyashita et al.
patent: 5741613 (1998-04-01), Moon et al.
patent: 5948572 (1999-09-01), Liu et al.
patent: 5989760 (1999-11-01), Mangat et al.
patent: 6458496 (2002-10-01), Motonaga et al.
patent: 6511778 (2003-01-01), Okazaki et al.
patent: 6558855 (2003-05-01), Tanaka et al.
patent: 6596656 (2003-07-01), Tanaka et al.
patent: 6645856 (2003-11-01), Tanaka et al.
patent: 6677107 (2004-01-01), Hasegawa et al.
patent: 2003/0180670 (2003-09-01), Hasegawa et al.
patent: 54-21272 (1979-02-01), None
patent: 54-83377 (1979-07-01), None
patent: 55-22864 (1980-02-01), None
patent: 56-30129 (1981-03-01), None
patent: 59-22050 (1984-02-01), None
patent: 60-85525 (1985-05-01), None
patent: 63-274156 (1988-11-01), None
patent: 4-97254 (1992-03-01), None
patent: 4-136854 (1992-05-01), None
patent: 5-289307 (1993-11-01), None
patent: 7-325383 (1995-12-01), None
patent: 2000-21754 (2000-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing integrated circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3478037

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.