Method of manufacturing insulation substrate for semiconductor d

Details Method of manufacturing insulation substrate for semiconductor d Method of manufacturing insulation substrate for semiconductor d

1993-09-09

1994-08-09

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156634, 156645, 156656, 1566591, 156902, B44C 122, C23F 100

Patent

active

053363647

ABSTRACT:
In manufacturing an insulation substrate used in a semiconductor device, a metal plate (10) having relatively thick body portions (11a,11b,11c) and relatively thin linkage portions (12,13) is prepared. The body portions are spaced from each other and the linkage portions link up the respective body portions. The metal plate is fixed to a metal flat plate (1) through a resin layer (2). The linkage portions are then removed through selective etching. The structure thus obtained is cut into a plurality of unit structures, to thereby obtain an in insulation substrate having conductive circuit patterns thereon.

REFERENCES:
patent: 4181563 (1980-01-01), Miyaka et al.
patent: 4631100 (1986-12-01), Pellegrino
patent: 4925525 (1990-05-01), Oku et al.

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