Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2001-05-07
2002-10-15
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S781000, C428S041400, C528S010000, C528S012000
Reexamination Certificate
active
06465368
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a film-forming material and, more particularly, to a film-forming material capable of forming silica-based films as an interlayer dielectric material in the manufacture of semiconductor devices and the like, having only a small metal impurity content, and exhibiting excellent relative dielectric constant characteristics and low leakage current characteristics.
2. Description of the Background Art
Conventionally, silica (SiO
2
) films formed by a vacuum process such as a CVD process have been extensively used as an interlayer dielectric film in the manufacture of semiconductor devices and the like. In recent years, an SOG (spin on glass) film which is a coating-type insulating film made from a composition containing tetraalkoxysilane hydrolyzate as a major component is used with the objective of forming a homogeneous interlayer dielectric. As high integration of semiconductor devices has advanced, an interlayer dielectric with a low relative dielectric constant made from a composition containing polyorganosiloxane as a major component, which is called an organic SOG, has been developed.
However, demand for further integration and layer multiplication of semiconductor devices requires more excellent electric insulation among conductors. Development of a more excellent interlayer dielectric material having a smaller metal impurity content, a more excellent relative dielectric constant, and lower leakage current characteristics.
A composition comprising fine particles obtained by the condensation of an alkoxysilane in the presence of ammonia (Japanese Patent Applications Laid-open No. 263045/1993 and No. 315319/1993) and a coating solution obtained by the condensation of a basic hydrolyzate of polyalkoxysilane in the presence of ammonia (Japanese Patent Applications Laid-open No. 340219/1999 and No. 340220/1999 have been proposed as materials having a low relative dielectric constant. However, the materials obtained by these methods are not suitable for industrial manufacture because of unstable properties of the reaction products, a high metal impurity content, and fluctuation of film characteristics such as relative dielectric constant characteristics and low leakage current characteristics.
An object of the present invention is to provide a method of manufacturing a film-forming material having only a small metal impurity content and exhibiting excellent relative dielectric constant characteristics and low leakage current characteristics, industrially and in a stable manner.
SUMMARY OF THE INVENTION
Specifically, the present invention provides a method of manufacturing an insulating film-forming material comprising dissolving an inorganic polymer compound or an organic polymer compound in an organic solvent having a solubility in water of 100 g/100 cc or less at 20° C. (hereinafter referred to as “specific organic solvent”), and causing the solution to come in contact with water or an acidic aqueous solution to perform liquid—liquid extraction.
The present invention further provides a method of forming a film comprising applying the film-forming composition obtained by the above method to a substrate and heating the applied composition.
The present invention also provides an insulating film obtained by the above film forming method.
Other objects, features and advantages of the invention will hereinafter become more readily apparent from the following description.
DETAILED DESCRIPTION OF THE INVENTION AND PREFERRED EMBODIMENTS
Inorganic Polymer Compound
In the present invention, the inorganic polymer compound is a compound obtained by the hydrolysis and condensation of at least one silane compound selected from the compounds shown by the following formula (1) (hereinafter referred to as “compound (1)”), the compounds shown by the following formula (2) (hereinafter referred to as “compound (2)”), and the compounds shown by the following formula (3) (hereinafter referred to as “compound (3)”) in the presence of a catalyst.
R
a
Si(OR
1
)
4−a
(1)
wherein R
1
is a hydrogen atom, fluorine atom, or monovalent organic group, R
1
is a monovalent organic group, and a is an integer from 1 to 2.
Si(OR
2
)
4
(2)
wherein R
2
represents a monovalent organic group,
R
3
b
(R
4
O)
3−b
Si—(R
7
)
d
—Si(OR
5
)
3−c
R
6
c
(3)
wherein R
3
, R
4
, R
5
, and R
6
individually represent a monovalent organic group, b and c individually represent an integer from 0 to 2, R
7
represents an oxygen atom, a phenylene group, or a group —(CH
2
)
n
— (wherein n is an integer from 1 to 6), and d is 0 or 1.
Compound (1)
As a monovalent organic group represented by R or R
1
in the above formula (1), an alkyl group, aryl group, allyl group, glycidyl group, and the like can be given. As R in the formula (1), a monovalent organic group, particularly an alkyl group and phenyl group, are preferable.
The alkyl groups having 1-5 carbon atoms such as a methyl group, ethyl group, propyl group, butyl group, and the like are preferably used. These alkyl groups may be either linear or branched, and the hydrogen atoms on the alkyl groups may be replaced with fluorine atoms.
As aryl groups used in the formula (1), a phenyl group, naphthyl group, methylphenyl group, ethyl phenyl group, chlorophenyl group, bromophenyl group, fluorophenyl group, and the like can be given.
The following compounds are given as shown as specific examples represented by the formula (1):
trimethoxysilane, triethoxysilane, tri-n-propoxysilane, tri-iso-propoxysilane, tri-n-butoxysilane, tri-sec-butoxysilane, tri-tert-butoxysilane, triphenoxysilane, fluorotrimethoxysilane, fluorotriethoxysilane, fluorotri-n-propoxysilane, fluorotri-iso-propoxysilane, fluorotri-n-butoxysilane, fluorotri-sec-butoxysilane, fluorotri-tert-butoxysilane, fluorotriphenoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltri-iso-propoxysilane, methyltri-n-butoxysilane, methyltri-sec-butoxysilane, methyltri-tert-butoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethyltri-iso-propoxysilane, ethyltri-n-butoxysilane, ethyltri-sec-butoxysilane, ethyltri-tert-butoxysilane, ethyltriphenoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltri-n-propoxysilane, vinyltri-iso-propoxysilane, vinyltri-n-butoxysilane, vinyltri-sec-butoxysilane, vinyltri-tert-butoxysilane, vinyltriphenoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltri-n-propoxysilane, n-propyltri-iso-propoxysilane, n-propyltri-n-butoxysilane, n-propyltri-sec-butoxysilane, n-propyltri-tert-butoxysilane, n-propyltriphenoxysilane, i-propyltrimethoxysilane, i-propyltriethoxysilane, i-propyltri-n-propoxy silane, i-propyltri-iso-propoxysilane, i-propyltri-n-butoxysilane, i-propyltri-sec-butoxysilane, i-propyltri-tert-butoxysilane, i-propyltriphenoxysilane, n-butyltrimethoxysilane, n-butyltriethoxysilane, n-butyltri-n-propoxysilane, n-butyltri-iso-propoxysilane, n-butyltri-n-butoxysilane, n-butyltri-sec-butoxysilane, n-butyltri-tert-butoxysilane, n-butyltriphenoxysilane, sec-butyltrimethoxysilane, sec-butyltriethoxysilane, sec-butyl-tri-n-propoxysilane, sec-butyltri-iso-propoxysilane, sec-butyltri-n-butoxysilane, sec-butyltri-sec-butoxysilane, sec-butyltri-tert-butoxysilane, sec-butyl-triphenoxysilane, t-butyltrimethoxysilane, t-butyltriethoxysilane, t-butyltri-n-propoxysilane, t-butyltri-iso-propoxysilane, t-butyltri-n-butoxysilane, t-butyltri-sec-butoxysilane, t-butyltri-tert-butoxysilane, t-butyltriphenoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltri-n-propoxy silane, phenyltri-iso-propoxysilane, phenyltri-n-butoxysilane, phenyltri-sec-butoxysilane, phenyltri-tert-butoxysilane, phenyltriphenoxysilane, &ggr;-aminopropyltrimethoxysilane, &ggr;-aminopropyltriethoxysilane, &ggr;-glycidoxypropyltrimethoxysilane, &ggr;-glycidoxypropyltriethoxysilane, &ggr;-trifluoropropyltrimethoxysilane, &ggr;-trifluoropropyltriethoxysilane, dimethyldimethoxysilane, dim
Inoue Yasutake
Kawai Junji
Nishikawa Michinori
Yamada Kinji
Ghyka Alexander
JSR Corporation
LandOfFree
Method of manufacturing insulating film-forming material,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing insulating film-forming material,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing insulating film-forming material,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3000176