Method of manufacturing insulated gate semiconductor device

Details Method of manufacturing insulated gate semiconductor device Method of manufacturing insulated gate semiconductor device

2006-10-24

2006-10-24

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S649000, C438S583000, C438S651000, C257S368000, C257S383000, C257S384000, C257S385000, C257S387000

Reexamination Certificate

active

07125787

ABSTRACT:
A gate electrode includes a first polysilicon film remaining on a first oxide film, a part of a second polysilicon layer8superimposed on the polysilicon layer, and a part of the second polysilicon layer partially extending over second gate oxide films. Thus, the thickness of the gate electrode on the first gate oxide film is the same as that of the gate electrode of the prior art, but the film thickness t2of the gate electrode10on the second gate oxide films6A and6B is thinner than the thickness t1of the prior art. Therefore, the height gap h2between the gate electrode10and the N+type source layer11and the height gap h2between the gate electrode10and the N+type drain layer12become smaller compared to those of prior art, leading to the improved flatness of the interlayer oxide film13.

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