Method of manufacturing image sensor

Details Method of manufacturing image sensor Method of manufacturing image sensor

2006-04-25

2008-08-19

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S292000

Reexamination Certificate

active

07413921

ABSTRACT:
A method of manufacturing an image sensor comprises forming an isolation layer defining an active region in a semiconductor substrate using a first mask pattern formed on the semiconductor substrate, forming a first ion implantation mask pattern by reducing a width of the first mask pattern to expose an edge portion of the active region around the isolation layer, forming a first hole accumulation region by implanting a first conductive type of impurity ions into the edge portion of the active region using the first ion implantation mask pattern, forming a second ion implantation mask pattern covering the isolation layer and the first hole accumulation region, and forming a photodiode by implanting a second conductive type of impurity ions into a region of the semiconductor substrate using the second ion implantation mask pattern, wherein at least a portion of the region is surrounded by the first hole accumulation region in the active region.

REFERENCES:
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patent: 6472245 (2002-10-01), Lee
patent: 6734471 (2004-05-01), Kim
patent: 7224011 (2007-05-01), Jang
patent: 2003-0052639 (2003-06-01), None
patent: 10-2004-0008912 (2004-01-01), None
patent: 10-2005-0042910 (2005-11-01), None
Patent Abstracts of Japan Publication No. 11-353889.
Patent Abstracts of Japan Publication No. 2002-318265.
Korean Intellectual Property Office Korean Patent Abstracts Publication No. 10-0425440.

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