Method of manufacturing image sensor

Details Method of manufacturing image sensor Method of manufacturing image sensor

2011-02-22

2011-02-22

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S292000, C438S057000, C438S075000

Reexamination Certificate

active

07892877

ABSTRACT:
Provided is a method of manufacturing an image sensor which may include forming a plurality of photoelectric converters on a semiconductor substrate, forming a silicon nitride (SiN) film on the plurality of photoelectric converters, supplying plasma gas including hydrogen to the SiN film, and performing a heat treatment on the semiconductor substrate.

REFERENCES:
patent: 6194258 (2001-02-01), Wuu
patent: 6835590 (2004-12-01), Lee
patent: 2006/0084195 (2006-04-01), Lyu
patent: 2007/0117254 (2007-05-01), Pain
patent: 2007/0204959 (2007-09-01), Nakanishi et al.
patent: 1-245528 (1989-09-01), None
patent: 2001-230402 (2001-08-01), None
patent: 2002-231915 (2002-08-01), None
patent: 2001-0061489 (2001-07-01), None
patent: 10-2002-0045867 (2002-06-01), None
patent: 2003-0040865 (2003-05-01), None
patent: 10-2006-0104881 (2006-10-01), None
Korean Notice of Allowance dated Oct. 16, 2007.
Korean Notice of Examination Report dated Jun. 20, 2007 for corresponding Korean Patent Application No. 10-2006-0074835.

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