Method of manufacturing III-V nitride semiconductor device

Details Method of manufacturing III-V nitride semiconductor device Method of manufacturing III-V nitride semiconductor device

2007-11-06

2009-06-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S718000, C438S931000, C257SE21060, C257SE21222

Reexamination Certificate

active

07544611

ABSTRACT:
An aluminum gallium nitride/gallium nitride layer (III-V nitride semiconductor layer) is formed on the surface of a silicone carbide substrate. The aluminum gallium nitride/gallium nitride layer is dry-etched from an exposed surface, using a chlorine-based gas (first gas) and a surface via hole is thereby formed. A back via hole, which is to be connected to the surface via hole, is formed by dry-etching the silicon carbide substrate from an exposed back side using a fluorine-based gas (second gas).

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