Method of manufacturing high-voltage semiconductor device...

Details Method of manufacturing high-voltage semiconductor device... Method of manufacturing high-voltage semiconductor device...

2011-03-22

2011-03-22

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S530000, C438S542000, C438S548000, C438S549000, C257SE27064

Reexamination Certificate

active

07910466

ABSTRACT:
A high-voltage semiconductor device and a method for making the same are provided. A high-voltage semiconductor device and a low-voltage semiconductor device are formed in a single substrate, a photolithography process that is required to form a high-voltage well region is omitted, and the well region of the high-voltage semiconductor is formed together with the well region of the low-voltage semiconductor device formed in another photolithography process.

REFERENCES:
patent: 5498554 (1996-03-01), Mei
patent: 5780907 (1998-07-01), Ema et al.
patent: 6090652 (2000-07-01), Kim
patent: 6309921 (2001-10-01), Ema et al.
patent: 8097378 (1996-04-01), None

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