Method of manufacturing high performance bipolar transistors in

Details Method of manufacturing high performance bipolar transistors in Method of manufacturing high performance bipolar transistors in

1994-08-03

1997-01-14

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257588, H01L 2976

Patent

active

055942687

ABSTRACT:
A BiCMOS manufacturing process for fabricating an emitter of a bipolar transistor includes the steps of forming footings on a silicon substrate for prospectively bearing edges of the emitter, forming a polysilicon emitter having a medial portion overlying the silicon substrate and lateral edges on the footings, removing the footings leaving notches at the lateral edges of the polysilicon emitter and refilling the notches with a thin polysilicon film. The bipolar transistor in a BiCMOS integrated circuit resulting from this process includes a silicon semiconductor substrate having a substantially flat surface, a field oxide film laterally bounding the silicon semiconductor substrate and a polysilicon emitter abutting the flat surface of the silicon semiconductor substrate.

REFERENCES:
patent: 4939104 (1990-07-01), Pollack et al.
patent: 4975381 (1990-12-01), Taka et al.
patent: 5147809 (1992-09-01), Won et al.
patent: 5403757 (1995-04-01), Suzuki
patent: 5444285 (1995-08-01), Robinson et al.

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