Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-10-24
2006-10-24
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C117S073000, C117S077000
Reexamination Certificate
active
07125801
ABSTRACT:
The present invention provides a Group III nitride crystal substrate whose surface has concavities and convexities reduced in size. The surfaces with concavities and convexities, such as hillocks, pits and facets, of Group III nitride crystals are brought into contact with a melt and thereby the surfaces are subjected to meltback etching or mechanochemical polishing. The melt includes at least one of alkali metal and alkaline-earth metal. Thus a Group III nitride crystal substrate that has reduced strain and a reduced number of defects, which are caused through the processing, and is excellent in surface flatness is manufactured. Furthermore, by the use of the Group III nitride crystal substrate of the present invention, for instance, semiconductor devices of high performance can be obtained.
REFERENCES:
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patent: 2004/0003495 (2004-01-01), Xu
patent: 2002-293696 (2002-10-01), None
patent: 2004013385 (2004-02-01), None
F.Kawamura et al., “Growth of Transpatent Large Size GaN Single Crystal with Low Dislocations Using Alkali Metal-based Flux”, Japanese Association for Crystal Growth, vol. 30, No. 2, pp. 96-103 (2003).
F.A. Ponce et al., “Homoepitaxy of GaN on polished bulk single crystal by metalorganic chemical vapor desposition”, Appl. Phys. Let., vol. 68, No. 7 pp. 917-919 (1996).
Y.Kaneko et al., “Melt-Back Etching of GaN”, Solid-state Electrons, vol. 41, No. 2, pp. 295-298 (1997).
Kawamura Fumio
Kidoguchi Isao
Kitaoka Yasuo
Minemoto Hisashi
Mori Yusuke
Hamre Schumann Mueller & Larson P.C.
Norton Nadine
Tran Binh X.
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