Method of manufacturing group-III nitride crystal

Details Method of manufacturing group-III nitride crystal Method of manufacturing group-III nitride crystal

2007-10-30

2007-10-30

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S081000, C117S082000, C117S083000

Reexamination Certificate

active

10999338

ABSTRACT:
There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

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