Method of manufacturing group III nitride crystal

Details Method of manufacturing group III nitride crystal Method of manufacturing group III nitride crystal

2011-01-04

2011-01-04

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

C438S508000, C438S604000, C438S609000, C438S779000, C257SE21009, C257SE21097, C257SE21111, C257SE21131, C257SE29003

Reexamination Certificate

active

07863167

ABSTRACT:
Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face (10m) of a III-nitride substrate (10), III-nitride crystal (20) at least either whose constituent-atom type and ratios, or whose dopant type and concentration, differ from those of the III-nitride substrate (10); and a step of removing the III-nitride substrate (10) by vapor-phase etching.

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