Method of manufacturing gallium phosphide single crystals with l

Details Method of manufacturing gallium phosphide single crystals with l Method of manufacturing gallium phosphide single crystals with l

1980-03-14

1981-12-01

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156607, C30B 1504

Patent

active

043034640

ABSTRACT:
Gallium phosphide single crystals with low defect density which are manufactured by the liquid encapsulation Czochralski pulling method and which are characterized in that they are doped or not doped with at least one kind of dopant which is electrically active in gallium phosphide and are so doped as to have at least one dopant such as boron or some other strongly reducing impurity which has a reducing activity equal to or greater than that of boron remain in the crystals in a quantity not less than 1.times.10.sup.17 cm.sup.-3 and the sum of dislocation etch pit density and small conical etch pit density of the surface (111)B which has been subjected to etching for 3 to 5 minutes with RC etchant at a temperature of 65.degree. C..about.75.degree. C. after removing the mechanically damaged layer on the surface does not exceed 1.times.10.sup.5 cm.sup.-2, and a method of manufacturing the crystals.

REFERENCES:
patent: 3874952 (1975-04-01), Woodall
Brantley et al., J. Appl. Phys., vol. 46, No. 6, 1975 p. 2629.
Iizuka, "J. Electrochem. Soc.: Solid State Sci." vol. 118, No. 7, 1971, p.1190.
Petroff et al., "J. of Appl. Phys." vol. 47, No. 4, 1976, p. 1583.
Nygren, "J. of Crys. Growth," 19, 1973, p. 21.
Morrison et al., "J. Phys. C.: Solid State Phys." vol. 7, 1974, p. 633.
Young et al., "J. Phys. D.: Appl. Phys." 1971, vol. 4, p. 995.
Hayes et al., "J. Phys. C.: Solid State Phys." 1969, Ser. 2, vol. 2, p. 2402.
Rozgonyi et al., "J. Appl. Phys." vol. 43, No. 7, 1972, p. 3141.
Bass et al., 1966 Proc. Int. Symp. on GaAs, Reading (London: Inst. Phys.) pp. 41-45.

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