Method of manufacturing gallium nitride based semiconductor...

Details Method of manufacturing gallium nitride based semiconductor... Method of manufacturing gallium nitride based semiconductor...

2005-09-20

2005-09-20

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S518000, C438S519000, C438S527000, C438S530000, C438S047000, C257S013000, C257S022000, C257S076000, C257S079000

Reexamination Certificate

active

06946372

ABSTRACT:
A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device includes forming a contact resistance improved layer on a p-type GaN-based semiconductor layer with at least one metal selected from the group of Au, Mg, Mn, Mo, Pd, Pt, Sn, Ti and Zn, heat-treating the p-type GaN-based semiconductor layer so that elements in the contact resistance improved layer diffuse into the p-type GaN-based semiconductor layer and that Ga elements in the p-type GaN-based semiconductor layer dissolve into the contact resistance improved layer, and removing the contact resistance improved layer remaining on the p-type GaN-based semiconductor layer.

REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 6287947 (2001-09-01), Ludowise et al.
patent: 2002/0072204 (2002-06-01), Uemura et al.
patent: 2003/0062530 (2003-04-01), Okazaki et al.

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