Method of manufacturing folded capacitors in semiconductor and f

Details Method of manufacturing folded capacitors in semiconductor and f Method of manufacturing folded capacitors in semiconductor and f

1990-06-05

1991-04-02

Hix, L. T.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 236, 357 51, H01G 406, H01G 420

Patent

active

050051032

ABSTRACT:
A method of manufacturing folded capacitors comprises the steps of: forming a first storage electrode and a first insulating layer; forming a first plate electrode and a second insulating layer thereon and forming a pad poly thereon; limiting the first plate electrode to a predetermined portion; leaving a spacer; forming a second storage electrode; and depositing a third insulating layer and a second plate electrode thereon. It is possible to manufacture a capacitor with a large capacitance and to simplify the manufacturing processes of the capacitor by using the conventional capacitor manufacturing processes. The folded capacitors with a larger capacitance per unit area can be obtained without making the insulating layer be thinned even if the plane area of the capacitor may be reduced remarkably according to a tendency to high integration density.

REFERENCES:
patent: 4827323 (1989-05-01), Tigelaar et al.
patent: 4951175 (1990-08-01), Kurosawa et al.

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