Method of manufacturing fluorine-containing silicon oxide films

Details Method of manufacturing fluorine-containing silicon oxide films Method of manufacturing fluorine-containing silicon oxide films

1998-02-23

2000-11-21

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

42725539, 42725517, C23C 1640

Patent

active

061499765

ABSTRACT:
The fluorine type silicon oxide film is formed using plasma CVD apparatus on a semiconductor wafer using a gas which is a mixture of a silicon source gas, a silicon type fluorine source gas, an oxidizing agent and an inert gas. The oxide film is formed using the inert gas at a flow which is at least five times the total flow rate of the silicon source gas and the silicon type fluorine source gas. Tetraethylorthosilicate (TEOS) is used as the silicon source gas; fluorotriethoxysilane (TEFS) is used as the silicon type fluorine source gas; oxygen (O.sub.2) is used as the oxidizing agent; and a helium (He) or argon (Ar) gas is used as the inert gas.

REFERENCES:
patent: 5300460 (1994-04-01), Collins et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5661093 (1997-08-01), Ravi et al.
patent: 5827785 (1998-10-01), Bhan et al.
patent: 5876798 (1999-03-01), Vassiliev
patent: 5908672 (1999-06-01), Ryu et al.

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