Method of manufacturing flash memories of semiconductor devices

Details Method of manufacturing flash memories of semiconductor devices Method of manufacturing flash memories of semiconductor devices

2005-08-23

2005-08-23

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S302000, C438S514000, C438S525000, C438S530000

Reexamination Certificate

active

06933214

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. A monoatomic dopant having a high atomic weight is implanted to form an ion implantation layer, instead of using a dopant of a small atomic weight such as B or a molecular ion such as a BF2in order to control the threshold voltage of the semiconductor device. Therefore, in an annealing process for mitigating damage caused by ion implantation, it is possible to limit TED (transient enhanced diffusion) of the dopant and prevent degradation of the film quality due to outgasing.

REFERENCES:
patent: 5605849 (1997-02-01), Chen et al.
patent: 6245639 (2001-06-01), Tsai et al.
patent: 6362059 (2002-03-01), Fukasaku et al.
patent: 6555484 (2003-04-01), Ramkumar et al.

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