Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-09-08
2008-11-11
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S785000, C257SE29272, C257SE21208, C257SE21436, C257SE21663
Reexamination Certificate
active
07449346
ABSTRACT:
A method of manufacturing a ferroelectric thin film with good crystallinity and improved surface roughness includes: forming on a substrate a metal nitride-based precursor layer containing one selected from the group consisting of TiN, ZrxTi(1-x)N (0<x<1), FeN, and NbN; forming on the metal nitride-based precursor layer a mixed gas atmosphere containing oxygen (O2) and one reactive gas selected from the group consisting of PbO(g), Bi2O3(g), and K2O(g); annealing the metal nitride-based precursor layer in the mixed gas atmosphere and forming a ferroelectric thin film containing one selected from the group consisting of PbTiO3, PbZrxTi(1-x)O3(0<x<1), Bi2Ti2O7, Bi4Ti3O12, BiFeO3, and KNbO3.
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patent: 2002/0146915 (2002-10-01), Narwankar et al.
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Estrada Michelle
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
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