Method of manufacturing EUVL alternating phase-shift mask

Details Method of manufacturing EUVL alternating phase-shift mask Method of manufacturing EUVL alternating phase-shift mask

2006-03-06

2009-10-13

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07601467

ABSTRACT:
A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

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patent: 6645679 (2003-11-01), La Fontaine et al.
patent: 6821682 (2004-11-01), Stearns et al.
patent: 1020020014072 (2002-02-01), None
patent: 1020020052468 (2002-04-01), None
patent: 100429860 (2004-04-01), None

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