Method of manufacturing etalon

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S024000, C216S066000, C216S067000, C216S080000

Reexamination Certificate

active

06942812

ABSTRACT:
In producing an etalon, a thickness of an etalon base plate is measured, and the etalon base plate is placed in a process chamber. Then, a gas having a chemical reactivity with respect to a material of the etalon base plate is introduced into the process chamber, and a surface of the etalon base plate is etched for only a predetermined time corresponding to a thickness of the etalon base plate, thereby obtaining the etalon having a desired thickness.

REFERENCES:
patent: 5021121 (1991-06-01), Groechel et al.
patent: 6005995 (1999-12-01), Chen et al.
patent: 6323987 (2001-11-01), Rinaudo et al.
patent: 6421365 (2002-07-01), Kleinschmidt et al.
patent: 6464842 (2002-10-01), Golovchenko et al.
patent: 6639682 (2003-10-01), Neily et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing etalon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing etalon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing etalon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3398464

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.