Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2005-09-13
2005-09-13
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S024000, C216S066000, C216S067000, C216S080000
Reexamination Certificate
active
06942812
ABSTRACT:
In producing an etalon, a thickness of an etalon base plate is measured, and the etalon base plate is placed in a process chamber. Then, a gas having a chemical reactivity with respect to a material of the etalon base plate is introduced into the process chamber, and a surface of the etalon base plate is etched for only a predetermined time corresponding to a thickness of the etalon base plate, thereby obtaining the etalon having a desired thickness.
REFERENCES:
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patent: 6323987 (2001-11-01), Rinaudo et al.
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patent: 6464842 (2002-10-01), Golovchenko et al.
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Irikuchi Satoshi
Koeda Masaru
Tateno Ryo
Kanesaka Manabu
Olsen Allan
Shimadzu Corporation
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