Method of manufacturing Er-doped silicon nano-dot array and...

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mechanically forming pattern into a resist

Reexamination Certificate

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C216S041000, C216S048000, C216S062000, C438S706000

Reexamination Certificate

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06841082

ABSTRACT:
A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume. The Er-doped silicon film is patterned.

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patent: 08-306978 (1996-11-01), None
1996 American Institute of Physics, “Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation”, S. Komuro, et al., 3 pages.
Dec. 15, 2000, vol. 290, SCIENCE, “Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymers Templates”, T. Thurn-Albrecht, et al., 4 pages.
1997 American Institute of Physics, “Cobalt doping in BaTi03thin films by two-target pulsed KrF laser ablation with in situ laser annealing”, A. Ito, et al., 3 pages.

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