Method of manufacturing electrostatic discharge protective circu

Details Method of manufacturing electrostatic discharge protective circu Method of manufacturing electrostatic discharge protective circu

1999-02-08

2000-09-05

Utech, Benjamin L

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

438706, 438719, 438689, H01L 2104

Patent

active

061142263

ABSTRACT:
A method for manufacturing an electrostatic discharge (ESD) protective circuit. By using the method according to the invention, since the Zener diode, which has low trigger voltage and low power consumption, is formed in the electrostatic protective circuit, the protective ability of the ESD protective circuit is greatly improved as the integration is relatively high. Furthermore, it is necessary to use an extra photo mask as the ESD implantation step and the Zener breakdown implantation step are performed when the internal circuit and the ESD protective circuit are formed simultaneously, so that the cost is reduced.

REFERENCES:
patent: 5308782 (1994-05-01), Mazure et al.
patent: 5543650 (1996-08-01), Au et al.
patent: 5946573 (1999-08-01), Hsu
patent: 5953616 (1999-09-01), Ahn
patent: 5982017 (1999-11-01), Wu et al.

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