Method of manufacturing electronic device using phase-shifting m

Details Method of manufacturing electronic device using phase-shifting m Method of manufacturing electronic device using phase-shifting m

1998-06-30

2000-09-05

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 5, 430396, G03F 900, G03C 500

Patent

active

061140953

ABSTRACT:
Transmitting portions of a phase-shifting mask include plural first transmitting areas periodically arranged along a first direction and a second direction and a second transmitting area provided in an area surrounded with adjacent four first transmitting areas among the plural first transmitting areas. The first transmitting areas are formed by recessing a board so that a phase difference of substantially 180 degrees in exposure light can be caused between adjacent first transmitting areas. A phase difference of substantially 90 degrees in the exposure light is caused between the second transmitting area and the surrounding first transmitting areas. Thus, isolated patterns arranged at high density can be formed correspondingly to the first transmitting areas and the second transmitting area.

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J.Y. Lee, et al., Simultaneously Formed Storage Node Contact and Metal Contact Cell (SSMC) for 1Gb DRAM and Beyond, IEDM '96 Technical Digest, pp. 593, 1996.

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