Method of manufacturing dynamic amount semiconductor sensor

Details Method of manufacturing dynamic amount semiconductor sensor Method of manufacturing dynamic amount semiconductor sensor

1998-06-25

2000-04-11

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438411, 257417, 7351435, H01L 2984, G01P 15125, G01P 1513

Patent

active

060487747

ABSTRACT:
In a method of manufacturing a dynamic amount sensor including a beam structure and a fixed electrode which are respectively supported by anchor parts of a substrate, opening portions are formed on a first semiconductor substrate where the anchor parts are to be formed. Each of the opening portions is composed of a plurality of stripe-like openings. Then a first thin film for forming the anchor parts and a second thin film are formed on the first semiconductor substrate in that order. After the surface of the second thin film is polished, a second semiconductor substrate is bonded to the polished surface of the second thin film. In this method, because the opening portions are composed of the plurality of stripe-like openings, the second thin film is flattened without having any steps thereon.

REFERENCES:
patent: 5345824 (1994-09-01), Sherman et al.
patent: 5461916 (1995-10-01), Fujii et al.
patent: 5465604 (1995-11-01), Sherman
patent: 5540095 (1996-07-01), Sherman et al.
patent: 5541437 (1996-07-01), Watanabe et al.

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