Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-08-05
2009-11-03
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C257SE21561
Reexamination Certificate
active
07611930
ABSTRACT:
In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.
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Dairiki Koji
Furuno Makoto
Jinbo Yasuhiro
Teduka Sachiaki
Toriumi Satoshi
Booth Richard A.
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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