Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2008-01-18
2010-11-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C313S503000, C257SE21002, C430S078000, C430S083000
Reexamination Certificate
active
07824936
ABSTRACT:
Disclosed herein is a method of preparing a low resistance metal line, is a method of manufacturing a dispersion type AC inorganic electroluminescent device and a dispersion type AC inorganic electroluminescent device manufactured thereby, in which a light-emitting layer and a dielectric layer between a lower electrode and an upper electrode are simultaneously formed through a single process using spin coating, thereby simplifying the overall manufacturing process and decreasing the manufacturing cost, and furthermore, the contact interface between the light-emitting layer and the dielectric layer is increased, therefore increasing the brightness of the device.
REFERENCES:
patent: 2005/0236984 (2005-10-01), Aoyama et al.
patent: 10-69979 (1998-03-01), None
patent: 2001-0090848 (2001-10-01), None
patent: 10-2002-0057639 (2002-07-01), None
Bae Min Jong
Jeong Tae Won
Park Shang Hyeun
Yu Se Gi
Cantor & Colburn LLP
Garber Charles D
Isaac Stanetta D
Samsung Electronics Co,. Ltd.
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