Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-06
2007-02-06
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C438S257000, C438S591000
Reexamination Certificate
active
11145624
ABSTRACT:
A method is disclosed that may include forming a first layer of insulating material above a semiconducting substrate, forming an aluminum oxide layer above the first layer of insulating material, forming a plurality of spaced-apart dots of material on the aluminum oxide layer, forming a second layer of insulating material on portions of the aluminum oxide layer not covered by the spaced-apart dots of material, forming a conductive layer above the second layer of insulating material and the plurality of spaced-apart dots of material, and removing excess portions of the layer of conductive material and the second layer of insulating material. A device is disclosed that may include a substrate and a floating gate electrode positioned above a tunnel insulation layer, the floating gate electrode including a layer of insulating material and a plurality of spaced-apart dots of material, each of which have a conductive nano-dot positioned on the dot of material, the dots of material and the conductive nano-dots being positioned in the layer of insulating material.
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Hill Christopher
Weimer Ronald A.
Micro)n Technology, Inc.
Quach T. N.
Williams Morgan & Amerson P.C.
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