Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with subsequent diverse...
Reexamination Certificate
2005-04-26
2005-04-26
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with subsequent diverse...
C438S301000, C438S478000, C438S500000, C438S501000
Reexamination Certificate
active
06884700
ABSTRACT:
A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
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patent: 6767775 (2004-07-01), Yudasaka et al.
patent: 20020132454 (2002-09-01), Ohtsu et al.
Aoki Takashi
Furusawa Masahiro
Yudasaka Ichio
Tran Thanh Y.
Zarabian Amir
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