Method of manufacturing crystalline thin-film of rare-earth comp

Details Method of manufacturing crystalline thin-film of rare-earth comp Method of manufacturing crystalline thin-film of rare-earth comp

1990-03-22

1991-08-20

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041922, C23C 1434

Patent

active

050412000

ABSTRACT:
Gd and Bi are used as sputter sources and are simultaneously sputtered, or sputtered alternately, each time in an amount for forming a layer having a thickness of 10 atoms or less, thereby forming a thin film on a substrate, in which Gd and Bi are mixed at a ratio of 4:3. The thin film is heat-treated to form a crystalline thin film having a phase represented by Gd.sub.4 Bi.sub.3.

REFERENCES:
Journal of the Less Common Metals, 41 (1975) 329-337, "Rare-Earth Bismuthides", K. Yoshihara et al.
Acta Cryst. (1966), 21, 435-437.
Journal of Less Common Metals, "Rare-Earth-Sb and -Bi Compounds with the Gd.sub.4 Bi.sub.3 (anti-Th.sub.3 P.sub.4) Structure", R. J. Gambino, 12 (1967) pp. 344-352.
J. Appl. Phys. 64 (7), Oct. 1, 1988, "Annealing Temperature Dependence of T.sub.c of Thin-Film Gd Grown on a Glass Substrate", O. Nakamura et al.
Journal of Applied Physics, vol. 35, No. 3 (1964), pp. 1033-1038, F. Holtzberg et al.
Growth, Characterization and Properties of Ultrathin Magnetic Films and Multilayers, Materials Research Soceity Symposium Proceedings, Vo. 151, and article entitled, "Thin-Film Gd.sub.4 Bi.sub.3 Grown on a Glass Substrate", Baba et al., pp. 289-293.

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