Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2008-07-15
2011-10-04
Dang, Trung Q (Department: 2892)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S509000, C257SE21133
Reexamination Certificate
active
08030190
ABSTRACT:
Provided is a method of manufacturing a crystalline semiconductor thin film formed on an amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate through induction heating using photo-charges. The method of manufacturing a crystalline semiconductor thin film includes a process of forming a low-concentration semiconductor layer on an inexpensive amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate and a process of crystallizing the low-concentration semiconductor layer through an induction heating manner using photo-charges. Accordingly, a low-concentration crystalline semiconductor thin film having characteristics better than those of general amorphous or poly-crystalline semiconductor thin film can be obtained by using simple processes at low production cost.
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PCT International Search Report of International Application No. PCT/KR2008/004145.
PCT Written Opinion of the International Search Authority of International Application No. PCT/KR2008/004145.
Dang Trung Q
Kile Park Goekjian Reed & McManus PLLC
Siliconfile Technologies Inc.
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