Method of manufacturing contact structure using barrier metal

Details Method of manufacturing contact structure using barrier metal Method of manufacturing contact structure using barrier metal

1995-06-22

1997-08-05

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438658, 438660, H01L 2128

Patent

active

056542356

ABSTRACT:
A titanium film is formed in a contact hole defined in a silicon substrate. The titanium film is transformed into a titanium silicide film and a first titanium nitride film by high-temperature lamp anneal. Further, a second titanium nitride film is stacked on the first titanium nitride film. Conditions are applied under which the titanium nitride films are formed into a granular crystal of primarily a (200) orientation. Therefore, barrier characteristics of the titanium nitride films to silicon atoms is not compromised even in the case of a subsequent high-temperature thermal treatment.

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Mitsuhashi et al, "Diffusion Barrier with Reactively Sputtered TiN Film for Thermally Stable Contact in Advanced VLSI", by Katsunori Mitsuhashi, Osamu Yamazaki, Atsuhisa Inoue, Tatsu Morita., Koui Ohtake and Masayoshi Koba, Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, 1988, pp. 569-572.

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